2-DIMENSIONAL NUMERICAL-ANALYSIS OF STABILITY-CRITERIA OF GAAS FETS

被引:92
作者
YAMAGUCHI, K [1 ]
ASAI, S [1 ]
KODERA, H [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
关键词
D O I
10.1109/T-ED.1976.18651
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1283 / 1290
页数:8
相关论文
共 27 条
[1]  
ASAI S, 1973, 5TH P C SOL STAT DEV, P442
[2]   SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].
BAECHTOLD, W ;
DAETWYLE.K ;
FORSTER, T ;
MOHR, TO ;
WALTER, W ;
WOLF, P .
ELECTRONICS LETTERS, 1973, 9 (10) :232-234
[3]   X AND KU BAND GAAS MESFET [J].
BAECHTOLD, W ;
WOLF, P ;
WALTER, W .
ELECTRONICS LETTERS, 1972, 8 (02) :35-+
[4]  
BECHTEL NG, 1971, MICROWAVE J, V14, P44
[5]   THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN .
PHYSICS LETTERS, 1965, 19 (07) :546-&
[6]   BROAD-BAND MICROWAVE MEASUREMENTS ON GAAS TRAVELING-WAVE TRANSISTORS [J].
DEAN, RH ;
DREEBEN, AB ;
HUGHES, JJ ;
MATARESE, RJ ;
NAPOLI, LS .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) :805-809
[7]   2-DIMENSIONAL DOMAIN DYNAMICS IN A PLANAR SCHOTTKY-GATE GUNN-EFFECT DEVICE [J].
GOTO, G ;
NAKAMURA, T ;
ISOBE, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) :120-126
[8]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[9]  
HASHIZUME N, 1974, SSD7471 IECE JAP, P77