2-DIMENSIONAL DOMAIN DYNAMICS IN A PLANAR SCHOTTKY-GATE GUNN-EFFECT DEVICE

被引：9

作者：

GOTO, G ^{[1
]}

NAKAMURA, T ^{[1
]}

ISOBE, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAMIKODANAKA,KAWASAKI,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 03期

关键词：

D O I：

10.1109/T-ED.1975.18090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：120 / 126

页数：7

共 20 条

[1]

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[2]

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[3]

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[5] PLANAR GUNN DIODES WITH IDEAL CONTACT GEOMETRY [J].

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[6] PLANAR SCHOTTKY-GATE GUNN DEVICES [J].

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[7] APPLICATION OF GUNN-EFFECT TO SUBNANOSECOND FULL ADDER AND FULL SUBTRACTOR [J].

ISOBE, T ;

NAKAMURA, T ;

GOTO, G .

PROCEEDINGS OF THE IEEE, 1973, 61 (06) :792-793

[8] GUNN-EFFECT PULSE AND LOGIC DEVICES [J].

IZADPANAH, SH ;

HARTNAGE.HL .

RADIO AND ELECTRONIC ENGINEER, 1970, 39 (06) :329-+

[9] HIGH-SPEED ADDER USING GUNN DIODES [J].

KATAOKA, S ;

KOMAMIYA, K ;

MORISUE, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1526-&

[10]

MAUSE K, 1972, 4 P INT S GAAS REL C

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