BROAD-BAND MICROWAVE MEASUREMENTS ON GAAS TRAVELING-WAVE TRANSISTORS

被引：5

作者：

DEAN, RH ^{[1
]}

DREEBEN, AB ^{[1
]}

HUGHES, JJ ^{[1
]}

MATARESE, RJ ^{[1
]}

NAPOLI, LS ^{[1
]}

机构：

[1] RCA CORP, PRINCETON, NJ 08540 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1973年 / MT21卷 / 12期

关键词：

D O I：

10.1109/TMTT.1973.1128135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：805 / 809

页数：5

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[1] REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS
DEAN, RH
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[2] GAAS TRAVELING-WAVE AMPLIFIER AS A NEW KIND OF MICROWAVE TRANSISTOR
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[3] TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER
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[4] DEAN RH, TO BE PUBLISHED
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[6] ELECTRON MOBILITY IN GAAS1-XPX ALLOYS (ABSENCE OF ALLOY SCATTERING EPITAXIAL LAYERS E/T)
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