GAAS TRAVELING-WAVE AMPLIFIER AS A NEW KIND OF MICROWAVE TRANSISTOR

被引：22

作者：

DEAN, RH ^{[1
]}

MATARESE, RJ ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

PROCEEDINGS OF THE IEEE | 1972年 / 60卷 / 12期

关键词：

D O I：

10.1109/PROC.1972.8948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1486 / 1502

页数：17

共 25 条

[1] FIELD PROFILE IN GAAS LAYER BIASED ABOVE TRANSFERRED-ELECTRON THRESHOLD [J].

DEAN, RH ;

SCHWARTZ, PM .

SOLID-STATE ELECTRONICS, 1972, 15 (04) :417-+

[2] OPTIMUM DESIGN OF THIN-LAYER GAAS AMPLIFIERS [J].

DEAN, RH .

PROCEEDINGS OF THE IEEE, 1969, 57 (07) :1327-+

[3] REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS [J].

DEAN, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) :1148-+

[4] PRACTICAL TECHNIQUE FOR CONTROLLING FIELD PROFILE IN THIN-LAYERS OF N-GAAS [J].

DEAN, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) :1144-+

[5] TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER [J].

DEAN, RH ;

DREEBEN, AB ;

KAMINSKI, JF ;

TRIANO, A .

ELECTRONICS LETTERS, 1970, 6 (24) :775-+

[6]

DEAN RH, TO BE PUBLISHED

[7]

DEAN RH, 1972, F3361569C1788 CONTR

[8]

FREY W, 1970, 8 P MOGA C AMST

[9]

FREY W, 1971, ARCH ELEK UBERTRAGUN

[10] CHARGE CONTROL APPROACH TO SMALL SIGNAL THEORY OF FIELD-EFFECT DEVICES [J].

HUANG, JST .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) :775-+

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