OPTIMUM DESIGN OF THIN-LAYER GAAS AMPLIFIERS

被引：9

作者：

DEAN, RH

机构：

[1] David Sarnoff Research Ctr., RCA Laboratories, Princeton

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 07期

关键词：

D O I：

10.1109/PROC.1969.7257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical result shows that electron diffusion in thin-layer GaAs amplifiers produces a frequency of maximum gain which can be in the range of 1 to 100 GHz. This result is used to obtain a set of curves to aid in device design. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1327 / +

页数：1

共 8 条

[1] DIENST JF, 1967, RCA REV, V28, P585
[2] SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING
KATAOKA, S
TATENO, H
KAWASHIM.M
[J]. ELECTRONICS LETTERS, 1969, 5 (03) : 48 - &
[3] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES
KINO, GS
ROBSON, PN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +
[4] SUPPRESSION OF GUNN OSCILLATIONS BY A 2-DIMENSIONAL EFFECT
KUMABE, K
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (12): : 2172 - +
[5] HIGH-POWER 1-GHZ COPLANAR GUNN-EFFECT OSCILLATORS
NORTON, LE
ENSTROM, RE
HEGYI, IJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (07) : 542 - +
[6] OHARA S, 1967, PRIVATE COMMUNICATIO
[7] 2-PORT MICROWAVE AMPLIFICATION IN LONG SAMPLES OF GALLIUM ARSENIDE
ROBSON, PN
KINO, GS
FAY, B
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 612 - +
[8] REDUCED BUILD-UP OF DOMAINS IN SHEET-TYPE GALLIUM-ARSENIDE GUNN OSCILLATORS
VLAARDINGERBROEK, MT
ACKET, GA
HOFMANN, K
BOERS, PM
[J]. PHYSICS LETTERS A, 1968, A 28 (02) : 97 - +

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