FIELD PROFILE IN GAAS LAYER BIASED ABOVE TRANSFERRED-ELECTRON THRESHOLD

被引：11

作者：

DEAN, RH

SCHWARTZ, PM

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期

关键词：

D O I：

10.1016/0038-1101(72)90113-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：417 / +

页数：1

相关论文

共 18 条

[1] OPTIMUM DESIGN OF THIN-LAYER GAAS AMPLIFIERS
DEAN, RH
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (07) : 1327 - +
[2] TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER
DEAN, RH
DREEBEN, AB
KAMINSKI, JF
TRIANO, A
[J]. ELECTRONICS LETTERS, 1970, 6 (24) : 775 - +
[3] DEAN RH, TO BE PUBLISHED
[4] LINEAR OR SMALL-SIGNAL THEORY FOR GUNN EFFECT
ENGELMANN, RW
QUATE, CF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 44 - +
[5] COUPLING BETWEEN SLOW WAVES AND CONVECTIVE INSTABILITIES IN SOLIDS
HAMMER, JM
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (12) : 358 - +
[6] JOHNSON, 1944, MATHEMATICAL PHYSICA, P161
[7] CALCULATION OF CHARACTERISTIC ADMITTANCES AND COUPLING COEFFICIENTS FOR STRIP TRANSMISSION LINES
KAMMLER, DW
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1968, MT16 (11) : 925 - +
[8] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES
KINO, GS
ROBSON, PN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +
[9] KOYAMA J, 1969, REV ELEC COMMUN LAB, V17, P1102
[10] GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS
KROEMER, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) : 819 - +