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FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES
被引:29
作者
:
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,ELECTR SCI LAB,UNIV PK,LOS ANGELES,CA 90007
UNIV SO CALIF,ELECTR SCI LAB,UNIV PK,LOS ANGELES,CA 90007
LEHOVEC, K
[
1
]
MILLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,ELECTR SCI LAB,UNIV PK,LOS ANGELES,CA 90007
UNIV SO CALIF,ELECTR SCI LAB,UNIV PK,LOS ANGELES,CA 90007
MILLER, RS
[
1
]
机构
:
[1]
UNIV SO CALIF,ELECTR SCI LAB,UNIV PK,LOS ANGELES,CA 90007
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1975年
/ ED22卷
/ 05期
关键词
:
D O I
:
10.1109/T-ED.1975.18118
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:273 / 281
页数:9
相关论文
共 19 条
[1]
AVALANCHE MULTIPLICATION IN BULK N-SI
[J].
DALAL, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton University, Princeton
DALAL, VL
.
APPLIED PHYSICS LETTERS,
1969,
15
(11)
:379
-&
[2]
GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
[J].
GREBENE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GREBENE, AB
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1969,
12
(07)
:573
-+
[3]
CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS
[J].
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
HAUSER, JR
.
SOLID-STATE ELECTRONICS,
1967,
10
(06)
:577
-&
[4]
EXCESS LEAKAGE-CURRENT NOISE IN JUNCTION FIELD-EFFECT TRANSISTORS
[J].
HAWKINS, RJ
论文数:
0
引用数:
0
h-index:
0
HAWKINS, RJ
;
BLOODWORTH, GG
论文数:
0
引用数:
0
h-index:
0
BLOODWORTH, GG
.
ELECTRONICS LETTERS,
1970,
6
(13)
:401
-+
[5]
2-DIMENSIONAL ANALYSIS OF INDIUM PHOSPHIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
[J].
HIMSWORTH, B
论文数:
0
引用数:
0
h-index:
0
机构:
CHELSEA COLL TECHNOL, PHYS DEPT, LONDON SW6, ENGLAND
CHELSEA COLL TECHNOL, PHYS DEPT, LONDON SW6, ENGLAND
HIMSWORTH, B
.
SOLID-STATE ELECTRONICS,
1973,
16
(08)
:931
-939
[6]
2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
[J].
HIMSWORTH, B
论文数:
0
引用数:
0
h-index:
0
HIMSWORTH, B
.
SOLID-STATE ELECTRONICS,
1972,
15
(12)
:1353
-+
[7]
CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
[J].
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
HOWER, PL
;
BECHTEL, NG
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
BECHTEL, NG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
:213
-220
[8]
COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
;
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1970,
14
(02)
:95
-&
[9]
KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120
[10]
VALIDITY OF GRADUAL CHANNEL APPROXIMATION FOR JUNCTION FIELD-EFFECT TRANSISTORS WITH DRIFT VELOCITY SATURATION
[J].
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,UNIVERSITY PK,CA 90007
LEHOVEC, K
;
SEELEY, WG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,UNIVERSITY PK,CA 90007
SEELEY, WG
.
SOLID-STATE ELECTRONICS,
1973,
16
(09)
:1047
-1054
←
1
2
→
共 19 条
[1]
AVALANCHE MULTIPLICATION IN BULK N-SI
[J].
DALAL, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton University, Princeton
DALAL, VL
.
APPLIED PHYSICS LETTERS,
1969,
15
(11)
:379
-&
[2]
GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
[J].
GREBENE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GREBENE, AB
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1969,
12
(07)
:573
-+
[3]
CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS
[J].
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
HAUSER, JR
.
SOLID-STATE ELECTRONICS,
1967,
10
(06)
:577
-&
[4]
EXCESS LEAKAGE-CURRENT NOISE IN JUNCTION FIELD-EFFECT TRANSISTORS
[J].
HAWKINS, RJ
论文数:
0
引用数:
0
h-index:
0
HAWKINS, RJ
;
BLOODWORTH, GG
论文数:
0
引用数:
0
h-index:
0
BLOODWORTH, GG
.
ELECTRONICS LETTERS,
1970,
6
(13)
:401
-+
[5]
2-DIMENSIONAL ANALYSIS OF INDIUM PHOSPHIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
[J].
HIMSWORTH, B
论文数:
0
引用数:
0
h-index:
0
机构:
CHELSEA COLL TECHNOL, PHYS DEPT, LONDON SW6, ENGLAND
CHELSEA COLL TECHNOL, PHYS DEPT, LONDON SW6, ENGLAND
HIMSWORTH, B
.
SOLID-STATE ELECTRONICS,
1973,
16
(08)
:931
-939
[6]
2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
[J].
HIMSWORTH, B
论文数:
0
引用数:
0
h-index:
0
HIMSWORTH, B
.
SOLID-STATE ELECTRONICS,
1972,
15
(12)
:1353
-+
[7]
CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
[J].
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
HOWER, PL
;
BECHTEL, NG
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
BECHTEL, NG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
:213
-220
[8]
COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
;
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1970,
14
(02)
:95
-&
[9]
KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120
[10]
VALIDITY OF GRADUAL CHANNEL APPROXIMATION FOR JUNCTION FIELD-EFFECT TRANSISTORS WITH DRIFT VELOCITY SATURATION
[J].
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,UNIVERSITY PK,CA 90007
LEHOVEC, K
;
SEELEY, WG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,UNIVERSITY PK,CA 90007
SEELEY, WG
.
SOLID-STATE ELECTRONICS,
1973,
16
(09)
:1047
-1054
←
1
2
→