2-DIMENSIONAL ANALYSIS OF INDIUM PHOSPHIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS

被引：10

作者：

HIMSWORTH, B ^{[1
]}

机构：

[1] CHELSEA COLL TECHNOL, PHYS DEPT, LONDON SW6, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 08期

关键词：

D O I：

10.1016/0038-1101(73)90100-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：931 / 939

页数：9

相关论文

共 8 条

[1] ALLEN DMD, 1954, RELAXATION METHODS
[2] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS
HAUSER, JR
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &
[3] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE
HILSUM, C
REES, HD
[J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &
[4] ELECTRON-TRANSFER IN INDIUM PHOSPHIDE
HILSUM, C
REES, HD
[J]. ELECTRONICS LETTERS, 1972, 8 (15) : 373 - +
[5] HILSUM C, PRIVATE COMMUNICATIO
[6] 2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
HIMSWORTH, B
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1353 - +
[7] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR
KENNEDY, DP
OBRIEN, RR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &
[8] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376