GAAS E/D MESFET 1-KBIT STATIC RAM FABRICATED ON SILICON SUBSTRATE

[1] MICROWAVE PROPERTIES OF SELF-ALIGNED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SILICON SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 112 - 114

[2] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[3] LEE J, IN PRESS APPL PHYS L

[4] LEE JW, 1986, 1986 P MAT RES S PAL

[5] McLevige W. V., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P203

[6] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921

[1] MICROWAVE PROPERTIES OF SELF-ALIGNED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SILICON SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 112 - 114

[2] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[3] LEE J, IN PRESS APPL PHYS L

[4] LEE JW, 1986, 1986 P MAT RES S PAL

[5] McLevige W. V., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P203

[6] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921