ANALYSIS OF PROPERTIES OF 3-TERMINAL TRANSFERRED-ELECTRON LOGIC DEVICES

被引:6
作者
CURTICE, WR [1 ]
机构
[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
关键词
D O I
10.1109/T-ED.1977.19013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1353 / 1359
页数:7
相关论文
共 12 条
[1]   MONTE-CARLO CALCULATION OF DRIFT VELOCITY OF ELECTRONS IN N-GAAS [J].
BAUHAHN, PE ;
CURTICE, WR .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1106-&
[2]  
GOTO G, 1973, IEEE T ELECTRON DEV, V22, P120
[3]   REQUIREMENT ON CARRIER CONCENTRATION AND GEOMETRY OF SCHOTTKY-ELECTRODE-TRIGGERED GUNN DEVICE [J].
HASHIZUME, N ;
TOMIZAWA, K .
ELECTRONICS LETTERS, 1976, 12 (09) :232-234
[4]   2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J].
HOCKNEY, RW ;
WARRINER, RA ;
REISER, M .
ELECTRONICS LETTERS, 1974, 10 (23) :484-486
[5]  
JOLLY ST, 1973, ECOM0308F US ARM EL
[6]   MULTIPLEXING AND DE-MULTIPLEXING TECHNIQUES WITH GUNN DEVICES IN GIGABIT-PER-SECOND RANGE [J].
MAUSE, K .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (12) :926-929
[7]  
MCKELVEY JP, 1966, SOLID STATE SEMICOND, P332
[8]   2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS [J].
REISER, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) :35-45
[9]   SIMPLE ANALYSIS AND COMPUTER SIMULATION ON LATERAL SPREADING OF SPACE-CHARGE IN BULK GAAS [J].
SUZUKI, N ;
YANAI, H ;
IKOMA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) :364-+
[10]   TRANSFERRED ELECTRON LOGIC DEVICES FOR GIGABIT-RATE SIGNAL-PROCESSING [J].
UPADHYAYULA, CL ;
SMITH, RE ;
WILHELM, JF ;
JOLLY, ST ;
PACZKOWSKI, JP .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (12) :920-926