REQUIREMENT ON CARRIER CONCENTRATION AND GEOMETRY OF SCHOTTKY-ELECTRODE-TRIGGERED GUNN DEVICE

被引:5
作者
HASHIZUME, N
TOMIZAWA, K
机构
[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
[2] MEIJI UNIV,FAC ENGN,TAMA KU,KAWASAKI,JAPAN
关键词
D O I
10.1049/el:19760178
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:232 / 234
页数:3
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (01) :2-12
[4]   CHARACTERISTICS AND APPLICATIONS OF A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE [J].
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