学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
REQUIREMENT ON CARRIER CONCENTRATION AND GEOMETRY OF SCHOTTKY-ELECTRODE-TRIGGERED GUNN DEVICE
被引:5
作者
:
HASHIZUME, N
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
HASHIZUME, N
TOMIZAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
TOMIZAWA, K
机构
:
[1]
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
[2]
MEIJI UNIV,FAC ENGN,TAMA KU,KAWASAKI,JAPAN
来源
:
ELECTRONICS LETTERS
|
1976年
/ 12卷
/ 09期
关键词
:
D O I
:
10.1049/el:19760178
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:232 / 234
页数:3
相关论文
共 4 条
[1]
HASHIZUME N, TO BE PUBLISHED
[2]
HASHIZUME N, 1974, ED7475 IECE TECHN GR
[3]
GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS
[J].
MAUSE, K
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
MAUSE, K
;
SCHLACHETZKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
SCHLACHETZKI, A
;
HESSE, E
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
HESSE, E
;
SALOW, H
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
SALOW, H
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
SC10
(01)
:2
-12
[4]
CHARACTERISTICS AND APPLICATIONS OF A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE
[J].
SUGETA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
SUGETA, T
;
TANIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
TANIMOTO, M
;
IKOMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
IKOMA, T
;
YANAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
YANAI, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(08)
:504
-515
←
1
→
共 4 条
[1]
HASHIZUME N, TO BE PUBLISHED
[2]
HASHIZUME N, 1974, ED7475 IECE TECHN GR
[3]
GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS
[J].
MAUSE, K
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
MAUSE, K
;
SCHLACHETZKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
SCHLACHETZKI, A
;
HESSE, E
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
HESSE, E
;
SALOW, H
论文数:
0
引用数:
0
h-index:
0
机构:
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER
SALOW, H
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
SC10
(01)
:2
-12
[4]
CHARACTERISTICS AND APPLICATIONS OF A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE
[J].
SUGETA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
SUGETA, T
;
TANIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
TANIMOTO, M
;
IKOMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
IKOMA, T
;
YANAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, DEPT ELECTR ENGN, TOKYO, JAPAN
YANAI, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(08)
:504
-515
←
1
→