GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS

被引：28

作者：

MAUSE, K ^{[1
]}

SCHLACHETZKI, A ^{[1
]}

HESSE, E ^{[1
]}

SALOW, H ^{[1
]}

机构：

[1] GERMAN POST OFF, RES INST, DARMSTADT, FED REP GER

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / SC10卷 / 01期

关键词：

D O I：

10.1109/JSSC.1975.1050547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2 / 12

页数：11

共 23 条

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[2]

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ADAMS, AT .

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[4]

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[5]

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HARTNAGEL, HL .

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[7] PULSE GENERATION IN PLANAR GUNN DEVICES WITH VARYING NL PRODUCT [J].

HEIME, K ;

SCHLACHETZKI, A .

ELECTRONICS LETTERS, 1972, 8 (08) :203-+

[8]

HESSE E, Patent No. 22338494

[9] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].

HOWER, PL ;

BECHTEL, NG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :213-220

[10] SIMPLE INTEGRATED-CIRCUIT WITH GUNN DEVICES [J].

MAUSE, K .

ELECTRONICS LETTERS, 1972, 8 (03) :62-+

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