COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH

被引：83

作者：

BOSCH, R ^{[1
]}

THIM, HW ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS, FREIBURG, WEST GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 01期

关键词：

D O I：

10.1109/T-ED.1974.17856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：16 / 25

页数：10

共 44 条

[1] GAAS LSA V-BAND OSCILLATORS [J].

BARRERA, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :866-&

[2] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[3]

BOSCH R, 1971, B GERMAN PHYS SOC, V6, P279

[4]

BOSCH R, 1971, MAR EUR SEM DEV RES

[5] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].

BUTCHER, PN ;

FAWCETT, W .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&

[6] THEORETICAL EFFICIENCY OF LSA MODE FOR GALLIUM ARSENIDE AT FREQUENCIES ABOVE 10GHZ [J].

BUTCHER, PN ;

HEARN, CJ .

ELECTRONICS LETTERS, 1968, 4 (21) :459-+

[7] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[8] THE KINETIC FORMULATION OF CONDUCTION PROBLEMS [J].

CHAMBERS, RG .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (390) :458-459

[9] STABILISATION MECHANISM FOR SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS [J].

CHARLTON ;

FREEMAN, KR ;

HOBSON, GS .

ELECTRONICS LETTERS, 1971, 7 (19) :575-&

[10]

COLLIVER DJ, 1972, 4 INT S GAAS REL COM

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