POPULATION PROCESS OF THE UPPER SUBBAND IN ALXGA1-XAS-GAAS QUANTUM WELLS

被引：14

作者：

ENSSLIN, K ^{[1
]}

HEITMANN, D ^{[1
]}

GERHARDTS, RR ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12993 / 12996

页数：4

共 22 条

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[4] DEPOPULATION OF SUBBANDS BY MAGNETIC AND ELECTRIC-FIELDS IN GATED ALXGA1-XAS-GAAS QUANTUM WELLS
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[J]. PHYSICAL REVIEW B, 1988, 37 (17): : 10150 - 10153
[5] EFFECTS OF THE FILLING FACTOR ON THE CYCLOTRON-RESONANCE IN GATED ALGAAS/GAAS HETEROSTRUCTURES
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[J]. SURFACE SCIENCE, 1988, 196 (1-3) : 263 - 267
[6] ENSSLIN K, 1989, THESIS U STUTTGART
[7] ENSSLIN K, 1988, IN PRESS 19TH P C PH
[8] FANG FF, 1988, SURF SCI, V196, P30
[9] EVIDENCE OF A MOBILITY EDGE IN THE 2ND SUBBAND OF AN AL0.33GA0.67AS-GAAS HETEROJUNCTION
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[J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7866 - 7869
[10] WAVELENGTH-DEPENDENT PHOTOCONDUCTION EFFECTS ON THE 2ND SUBBAND OCCUPANCY IN (AL, GA)AS/GAAS HETEROJUNCTIONS
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (12) : 783 - 789

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