EFFECTS OF THE FILLING FACTOR ON THE CYCLOTRON-RESONANCE IN GATED ALGAAS/GAAS HETEROSTRUCTURES

被引：8

作者：

ENSSLIN, K

HEITMANN, D

SIGG, H

PLOOG, K

机构：

来源：

SURFACE SCIENCE | 1988年 / 196卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(88)90692-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：263 / 267

页数：5

共 7 条

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[3] CYCLOTRON-RESONANCE OF TWO-DIMENSIONAL ELECTRONS IN ALXGA1-XAS/GAAS HETEROJUNCTION [J].

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NANBU, K .

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[4]

NICHOLAS RJ, IN PRESS

[5] DYNAMIC CONDUCTIVITY OF THE GAAS TWO-DIMENSIONAL ELECTRON-GAS AT LOW-TEMPERATURE AND CARRIER DENSITY [J].

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MACDONALD, AH .

PHYSICAL REVIEW LETTERS, 1987, 58 (01) :73-76

[6]

TAKADO Y, 1978, J PHYS SOC JAPAN, V54, P905

[7] CYCLOTRON MASSES IN N-GAAS/GA1-XALXAS HETEROJUNCTIONS [J].

THIELE, F ;

MERKT, U ;

KOTTHAUS, JP ;

LOMMER, G ;

MALCHER, F ;

ROSSLER, U ;

WEIMANN, G .

SOLID STATE COMMUNICATIONS, 1987, 62 (12) :841-844

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