GROWTH AND CHARACTERISTICS OF HGGAINS4 SINGLE-CRYSTALS

被引：2

作者：

MOLDOVYAN, NA

CHEBOTARU, VZ

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1990年 / 25卷 / 09期

关键词：

D O I：

10.1002/crat.2170250904

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystals of the HgGaInS4 layered compound were ground by the iodine transport technique. Results of their optical, photoelectric, and radiative properties' study are presented. The band gap and the binding energy of holes on the sensitizing centres were determined to be E(g) = 2.41 eV and E(a) = 0.2 eV, respectively. A presence of quasi-continuously distributed states was stated which are responsible for the exponential segment of the absorption edge and which take part in the radiative recombination.

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页码：997 / 1005

页数：9

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