INVERSION TWIN BOUNDARIES IN ZINC-OXIDE

被引:48
作者
KIM, JC
GOO, E
机构
[1] Department of Materials Science and Engineering, University of Southern California, Los Angeles, California
关键词
crystallography; polycrystalline materials; transmission electron microscopy; twinning; zinc oxide;
D O I
10.1111/j.1151-2916.1990.tb05129.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The crystallography and atomic structure of inversion twin boundaries were studied in polycrystalline ZnO using conventional transmission electron microscopy and high‐resolution electron microscopy. Inversion twin boundaries. In order to determine the atomic structure of the inversion twin boundary, high‐resolution transmission electron images were compared with simulated images. The atomic structure of the inversion boundary was determined to have a head‐to‐head configuration and its stacking sequence is AαBβAα‐ATCαA, where A, B, and C are Zn atomic planes and α, β, and T are O planes. A slight contraction of the planes in the boundary region is detected. Copyright © 1990, Wiley Blackwell. All rights reserved
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页码:877 / 884
页数:8
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