ULTRAFAST CARRIER CAPTURE AND LONG RECOMBINATION LIFETIMES IN GAAS QUANTUM WIRES GROWN ON NONPLANAR SUBSTRATES

被引:90
作者
CHRISTEN, J [1 ]
GRUNDMANN, M [1 ]
KAPON, E [1 ]
COLAS, E [1 ]
HWANG, DM [1 ]
BIMBERG, D [1 ]
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS 1,W-1000 BERLIN 12,GERMANY
关键词
D O I
10.1063/1.107671
中图分类号
O59 [应用物理学];
学科分类号
摘要
The recombination kinetics of the quasi-one-dimensional (1D) carriers confined in quantum wires grown by organometallic chemical vapor deposition on nonplanar, patterned substrates is reported for the first time. Due to the small (240 nm) wire spacing, excited carriers are efficiently captured into the wires on a sub-ps time scale. The radiative recombination lifetime of the captured 1D carriers is longer than 310 ps. Time-resolved cathodoluminescence spectra directly monitor thermalization of the carriers within the wire.
引用
收藏
页码:67 / 69
页数:3
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