SYSTEM GA-AS-SN - INCORPORATION OF SN INTO GAAS

被引：77

作者：

PANISH, MB ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.1662630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2659 / 2666

页数：8

共 42 条

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[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
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[5] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE
CASEY, HC
PANISH, MB
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[J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +
[6] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS
CASEY, HC
PANISH, MB
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) : 571 - +
[7] CASEY HC, PRIVATE COMMUNICATIO
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