Sol-Gel Films for Integrated Circuits

被引：8

作者：

Sigov, A. S. ^{[1
]}

Vorotilov, K. A. ^{[1
]}

Valeev, A. S. ^{[2
]}

Yanovskaya, M. I. ^{[3
]}

机构：

[1] Moscow Inst Radioengn Elect & Automat, Moscow 117454, Russia

[2] Sci Res Inst Mol Elect, Moscow 103460, Russia

[3] L Ya Karpov Inst Phys Chem, Moscow 103064, Russia

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 1994年 / 2卷 / 1-3期

关键词：

sol-gel method; microelectronics; planarization; ferroelectrics;

D O I：

10.1007/BF00486310

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is presented a brief overview of our results in the field of harnessing sol-gel techniques for promoting thin films in microelectronics technology. We discuss the problem of multilevel interconnection of IC, preparation of ferroelectric films, taper etching of oxide films, formation of isolating and passivating coatings on compound semiconductors, production of barrier zirconia and titania films, as well as certain aspects of practical use of the method in microelectronics.

引用

页码：563 / 567

页数：5

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[10]

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