FERROELECTRIC THIN-FILMS FOR MICROELECTRONIC APPLICATIONS

被引：5

作者：

ORLOVA, EV

PETROVSKY, VI

PEVTSOV, EF

SIGOV, AS

VOROTILOV, KA

机构：

[1] Moscow Institute of Radioenzineering, Eleotronics and Automation, Moscow, 117454, Vernadsky prosp.

来源：

FERROELECTRICS | 1992年 / 134卷 / 1-4期

关键词：

D O I：

10.1080/00150199208015613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Some microelectronic applications of ferroelectric films, such as MISFET, CCD, memory, and solid state image sensor are discussed. Certain results on preparation of thin films by sol-gel method are given as well.

引用

页码：365 / 376

页数：12

共 22 条

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