A STUDY OF ELECTRONIC STATES NEAR THE INTERFACE IN FERROELECTRIC-SEMICONDUCTOR HETEROJUNCTION PREPARED BY RF SPUTTERING OF PBTIO3

被引：51

作者：

MATSUI, Y

OKUYAMA, M

NODA, M

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 03期

关键词：

D O I：

10.1007/BF00617981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：161 / 166

页数：6

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