CHARACTERIZATION OF CDTE AND HGI2 CRYSTALS AND DETECTORS BY LIGHT SPOT SCANNING (LSS)

被引：15

作者：

SLAPA, M

TOVE, PA

BOBERG, G

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 150卷 / 01期

关键词：

D O I：

10.1016/0029-554X(78)90457-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：55 / 70

页数：16

共 39 条

[1]

ALEKSEENKO MV, 1974, FIZ TEKH POLUPROVODN, V8, P555

[2] TIME-DEPENDENT POLARIZATION OF CDTE GAMMA-RAY DETECTORS [J].

BELL, RO ;

ENTINE, G ;

SERREZE, HB .

NUCLEAR INSTRUMENTS & METHODS, 1974, 117 (01) :267-271

[3]

BERTOLINI G, 1968, SEMICONDUCTOR DETECT, P475

[4] EXTENSION OF RAMOS THEOREM AS APPLIED TO INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J].

CAVALLERI, G ;

GATTI, E ;

FABRI, G ;

SVELTO, V .

NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (01) :137-+

[5] CHARACTERIZATION EFFORT OF HGI2 RADIATION DETECTORS BY PULSED LASER TRANSIENT CHARGE INJECTION TECHNIQUE [J].

CHO, ZH ;

WATT, MK ;

SLAPA, M ;

TOVE, PA ;

SCHIEBER, M ;

DAVIES, T ;

SCHNEPPLE, W ;

RANDTKE, P ;

CARLSTON, R ;

SARID, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) :229-240

[6]

ENGSTROM O, UNPUBLISHED

[7] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS [J].

GOULDING, FS ;

HANSEN, WL .

NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02) :249-262

[8]

HUTH GC, 1964, REV SCI INSTR, V35, P9

[9]

Lampert M.A., 1970, CURRENT INJECTION SO

[10] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J].

LAMPERT, MA ;

ROSE, A .

PHYSICAL REVIEW, 1961, 121 (01) :26-&

← 1 2 3 4 →