LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS

被引：70

作者：

GOULDING, FS

HANSEN, WL

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1961年 / 12卷 / 02期

关键词：

D O I：

10.1016/0029-554X(61)90140-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：249 / 262

页数：14

共 5 条

[1] BAKENSTROSS G, 1958, BELL SYSTEM TECH J, P699
[2] BIONDI FJ, 1958, TRANSISTOR TECHNOLOG, P158
[3] PROPERTIES OF SILICON AND GERMANIUM .2.
CONWELL, EM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300
[4] GILLESPIE AB, 1953, SIGNAL NOISE RESOLUT
[5] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243