COMPARISON OF LOW-TEMPERATURE OXIDES ON POLYCRYSTALLINE INP BY AES, SIMS AND XPS

被引:55
作者
KAZMERSKI, LL [1 ]
IRELAND, PJ [1 ]
SHELDON, P [1 ]
CHU, TL [1 ]
CHU, SS [1 ]
LIN, CL [1 ]
机构
[1] POLY SOLAR INC,GARLAND,TX 75041
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期
关键词
D O I
10.1116/1.570591
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1061 / 1066
页数:6
相关论文
共 26 条
[1]  
BENNINGHOVEN A, 1979, SECONDARY ION MASS S
[2]  
BURK D, 1980, 14TH P IEEE PHOT SPE
[3]  
Chu T. L., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P661
[4]   EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J].
DUBOW, JB ;
BURK, DE ;
SITES, JR .
APPLIED PHYSICS LETTERS, 1976, 29 (08) :494-496
[5]  
FANG T, 1979, APPL PHYS LETT, V35, P266
[6]   655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J].
GODFREY, RB ;
GREEN, MA .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :790-793
[7]   MOS-GATE TECHNOLOGY ON GAAS AND OTHER 3-5 COMPOUNDS [J].
HARTNAGEL, HL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :860-867
[8]  
Kazmerski L. L., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1311
[9]  
Kazmerski L. L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P541
[10]   EVIDENCE FOR GRAIN-BOUNDARY PASSIVATION BY OXIDATION IN POLYCRYSTALLINE GAAS SOLAR-CELLS [J].
KAZMERSKI, LL ;
IRELAND, PJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :525-528