MOS-GATE TECHNOLOGY ON GAAS AND OTHER 3-5 COMPOUNDS

被引：23

作者：

HARTNAGEL, HL ^{[1
]}

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT ELECT & ELECTR ENGN,MERZ LABS,NEWCASTLE TYNE NE1 7RU NE,NORTHUMBERLAND,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：860 / 867

页数：8

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共 17 条

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES
BAYRAKTAROGLU, B
KOHN, E
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54
[2] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3] CHARACTERISTICS AND POTENTIAL APPLICATIONS OF GAAS1-XPX MIS STRUCTURES
FORBES, L
YEARGAN, JR
KEUNE, DL
CRAFORD, MG
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (01) : 25 - 29
[4] AUTOMATIC C-V PLOTTER
FORWARD, KE
HASEGAWA, H
HARTNAGEL, HL
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (06): : 487 - 489
[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
HASEGAWA, H
HARTNAGEL, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723
[6] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[7] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1975, 11 (03) : 53 - 54
[8] ITO T, 1973, T IEEJ A, V93, P11
[9] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
SCHWARTZ, B
SUNDBURG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390
[10] ELECTRON DYNAMICS IN SHORT-CHANNEL INP FIELD-EFFECT TRANSISTORS
MALONEY, TJ
FREY, J
[J]. ELECTRONICS LETTERS, 1974, 10 (07) : 115 - 116