EFFECTS OF GLASS CONTAMINATION AND ELECTRODE CURVATURE ON ELECTRICAL BREAKDOWN IN VACUUM

被引：17

作者：

DONALDSON, EE

RABINOWICZ, M

机构：

来源：

关键词：

D O I：

10.1063/1.1702606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：319 / &

共 9 条

Ahearn, AJ .

PHYSICAL REVIEW, 1936, 50 (03) :238-253

[2] P-LAYERS ON VACUUM HEATED SILICON [J].

ALLEN, FG ;

BUCK, TM ;

LAW, JT .

[3] GLASS, A DISTURBING FACTOR IN PHYSICAL ELECTRONICS MEASUREMENTS [J].

BILLS, DG ;

EVETT, AA .

[4] THE INITIATION OF ELECTRICAL BREAKDOWN IN VACUUM [J].

CRANBERG, L .

[5]

Donaldson E.E., 1962, VACUUM, V12, P11

FARRALL, GA .

[7]

Hawley R., 1960, VACUUM, V10, P310

MAITLAND, A .

[9]

WIJKER W, 1961, APPL SCI RES, VB 9, P1