VOLTAGE-DEPENDENT IMAGING OF ANTIMONY ON THE GAAS(110) SURFACE

被引:11
作者
MARTENSSON, P [1 ]
FEENSTRA, RM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
来源
JOURNAL OF MICROSCOPY-OXFORD | 1988年 / 152卷
关键词
D O I
10.1111/j.1365-2818.1988.tb01447.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:761 / 769
页数:9
相关论文
共 17 条
[1]   GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J].
BECKER, RS ;
SWARTZENTRUBER, BS ;
VICKERS, JS ;
HYBERTSEN, MS .
PHYSICAL REVIEW LETTERS, 1988, 60 (02) :116-119
[2]   ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110) [J].
BERTONI, CM ;
CALANDRA, C ;
MANGHI, F ;
MOLINARI, E .
PHYSICAL REVIEW B, 1983, 27 (02) :1251-1258
[3]   OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].
CHIAROTTI, G ;
NANNARONE, S ;
PASTORE, R ;
CHIARADIA, P .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+
[4]   ATOMIC-STRUCTURE OF THE ARSENIC-SATURATED SI(111) SURFACE [J].
COPEL, M ;
TROMP, RM ;
KOHLER, UK .
PHYSICAL REVIEW B, 1988, 37 (18) :10756-10763
[5]   CHAIN MODEL OF SI(111)2X1 SURFACE - OPTICAL-PROPERTIES AND SURFACE-STATE EXCITONS [J].
DELSOLE, R ;
SELLONI, A .
PHYSICAL REVIEW B, 1984, 30 (02) :883-893
[6]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[7]   FERMI-LEVEL PINNING AT THE SB/GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING SPECTROSCOPY [J].
FEENSTRA, RM ;
MARTENSSON, P .
PHYSICAL REVIEW LETTERS, 1988, 61 (04) :447-450
[8]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[9]   RECONSTRUCTION OF STEPS ON THE SI(111)2X1 SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
PHYSICAL REVIEW LETTERS, 1987, 59 (19) :2173-2176
[10]   SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE [J].
MAILHIOT, C ;
DUKE, CB ;
CHADI, DJ .
PHYSICAL REVIEW B, 1985, 31 (04) :2213-2229