FERMI-LEVEL PINNING AT THE SB/GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING SPECTROSCOPY

被引:205
作者
FEENSTRA, RM
MARTENSSON, P
机构
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D O I
10.1103/PhysRevLett.61.447
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O4 [物理学];
学科分类号
0702 ;
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页码:447 / 450
页数:4
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共 33 条
[1]   GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J].
BECKER, RS ;
SWARTZENTRUBER, BS ;
VICKERS, JS ;
HYBERTSEN, MS .
PHYSICAL REVIEW LETTERS, 1988, 60 (02) :116-119
[2]   ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110) [J].
BERTONI, CM ;
CALANDRA, C ;
MANGHI, F ;
MOLINARI, E .
PHYSICAL REVIEW B, 1983, 27 (02) :1251-1258
[3]   SCANNING TUNNELING MICROSCOPY [J].
BINNIG, G ;
ROHRER, H .
SURFACE SCIENCE, 1985, 152 (APR) :17-26
[4]   SCANNING TUNNELING MICROSCOPY - FROM BIRTH TO ADOLESCENCE [J].
BINNIG, G ;
ROHRER, H .
REVIEWS OF MODERN PHYSICS, 1987, 59 (03) :615-625
[5]  
BINNIG G, 1982, HELV PHYS ACTA, V55, P726
[6]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[7]   INVERSE PHOTOEMISSION FROM SURFACE AND INTERFACE STATES OF III-V-SEMICONDUCTORS [J].
DRUBE, W ;
HIMPSEL, FJ ;
LUDEKE, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :930-932
[8]   UNOCCUPIED SURFACE-STATES OF (1X1) SB OVERLAYERS ON GAAS(110) AND INP(110) [J].
DRUBE, W ;
HIMPSEL, FJ .
PHYSICAL REVIEW B, 1988, 37 (02) :855-857
[9]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[10]   THE INP(110)/SB INTERFACE - OHMIC BEHAVIOR AT LARGE SB COVERAGES [J].
ESSER, N ;
MUNDER, H ;
HUNERMANN, M ;
PLETSCHEN, W ;
RICHTER, W ;
ZAHN, DRT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1044-1047