THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES

被引：916

作者：

Brillson, L. J. ^{[1
]}

机构：

[1] Xerox Corp, Webster Res Ctr, Webster, NY 14580 USA

来源：

SURFACE SCIENCE REPORTS | 1982年 / 2卷 / 02期

关键词：

D O I：

10.1016/0167-5729(82)90001-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this review, we examine the contributions of surface science research to the understanding of metal-semiconductor interfaces. In particular, we survey conventional concepts of Schottky barrier formation, indicate the wide range of ultrahigh vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of metal-semiconductor interfaces.

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页码：123 / 326

页数：204

相关论文

共 1025 条

[1] ULTRAVIOLET PHOTOELECTRON INVESTIGATION OF SI(111)-AU INTERFACE AT HIGH-TEMPERATURES [J].

ABBATI, I ;

BRAICOVICH, L ;

FRANCIOSI, A .

SOLID STATE COMMUNICATIONS, 1980, 33 (08) :881-884

[2] PD2SI SURFACES THERMALLY ENRICHED IN SILICON - EVIDENCE OF NEW SI-PD BONDS [J].

ABBATI, I ;

ROSSI, G ;

BRAICOVICH, L ;

LINDAU, I ;

SPICER, WE ;

DEMICHELIS, B .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6994-6996

[3] THE SI(111)-PD INTERFACE - SPECTROSCOPIC EVIDENCE OF CHEMICAL PROCESSES AT LIQUID-NITROGEN TEMPERATURE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

PENNINO, UD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1303-1305

[4] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES [J].

ABBATI, I ;

BRAICOVICH, L ;

FRANCIOSI, A ;

LINDAU, I ;

SKEATH, PR ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :930-935

[5] COOLING EFFECT ON THE ELECTRON-STATES OF SI(III)-PD AND SI(III)-PT INTERFACES [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

DELPENNINO, U ;

VALERI, S .

SOLID STATE COMMUNICATIONS, 1980, 35 (12) :917-920

[6]

Abbati I., UNPUB

[7]

Abbati I., IN PRESS

[8] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].

ABSTREITER, G ;

BAUSER, E ;

FISCHER, A ;

PLOOG, K .

APPLIED PHYSICS, 1978, 16 (04) :345-352

[9] RADIATION EFFECTS ON SOLID-STATE DIFFUSION [J].

ADDA, Y ;

BEYELER, M ;

BREBEC, G .

THIN SOLID FILMS, 1975, 25 (01) :107-156

[10] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].

ALLEN, FG ;

GOBELI, GW .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&

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