PD2SI SURFACES THERMALLY ENRICHED IN SILICON - EVIDENCE OF NEW SI-PD BONDS

被引：19

作者：

ABBATI, I ^{[1
]}

ROSSI, G ^{[1
]}

BRAICOVICH, L ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

DEMICHELIS, B ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, ELECTR LABS, STANFORD, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.328665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6994 / 6996

页数：3

共 15 条

[1] ELECTRONIC-STRUCTURE OF COMPOUNDS AT PLATINUM - SILICON (III) INTERFACE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

BISI, O ;

ROVETTA, R .

SOLID STATE COMMUNICATIONS, 1981, 37 (02) :119-122

[2]

Abbati I., 1980, Journal of the Physical Society of Japan, V49, P1071

[3]

ABBATI I, 1981, J VAC SCI TECHNOL, V19

[4]

ABBATI I, 1980, 15TH P INT C PHYS SE

[5]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[6] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE [J].

BRAICOVICH, L ;

GARNER, CM ;

SKEATH, PR ;

SU, CY ;

CHYE, PW ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1979, 20 (12) :5131-5141

[7] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :916-919

[8] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J].

HO, PS ;

RUBLOFF, GW ;

LEWIS, JE ;

MORUZZI, VL ;

WILLIAMS, AR .

PHYSICAL REVIEW B, 1980, 22 (10) :4784-4790

[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J].

HO, PS ;

TAN, TY ;

LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1120-1124

[10] DETERMINATION OF ESCAPE DEPTH OF PHOTOEMITTED ELECTRONS IN GOLD IN ENERGY-RANGE 25-75 EV BY USE OF SYNCHROTRON RADIATION [J].

LINDAU, I ;

PIANETTA, P ;

YU, KY ;

SPICER, WE .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (06) :487-491

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