共 23 条
- [1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &BUCKLEY, WDMOSS, SC
- [2] THEORY OF VALENCE-BAND AUGER LINE-SHAPES - IDEAL SI(111), (100), AND (110)[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2202 - 2216FEIBELMAN, PJMCGUIRE, EJPANDEY, KC
- [3] VALENCE-BAND AUGER LINE-SHAPES FOR SI SURFACES - SIMPLIFIED THEORY AND CORRECTED NUMERICAL RESULTS[J]. PHYSICAL REVIEW B, 1978, 17 (02): : 690 - 698FEIBELMAN, PJMCGUIRE, EJ
- [4] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839FREEOUF, JLRUBLOFF, GWHO, PSKUAN, TS
- [5] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124HO, PSTAN, TYLEWIS, JERUBLOFF, GW
- [6] TRANSITION DENSITY OF STATES FOR SI(100) FROM L1L23V AND L23VV AUGER-SPECTRA[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (09) : 879 - 882HOUSTON, JEMOORE, GLAGALLY, MG
- [7] ENERGY-BAND THEORY OF AUGER LINE-SHAPES - SILICON L2,3VV AND LITHIUM KVV[J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6865 - 6871JENNISON, DR
- [8] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS[J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +KIRCHER, CJ
- [9] CORE HOLES IN CHEMISORBED ATOMS[J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2408 - 2419LANG, NDWILLIAMS, AR
- [10] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING[J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5396 - 5403MARGARITONDO, GROWE, JECHRISTMAN, SB