COOLING EFFECT ON THE ELECTRON-STATES OF SI(III)-PD AND SI(III)-PT INTERFACES

被引：8

作者：

ABBATI, I ^{[1
]}

BRAICOVICH, L ^{[1
]}

DEMICHELIS, B ^{[1
]}

DELPENNINO, U ^{[1
]}

VALERI, S ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 35卷 / 12期

关键词：

D O I：

10.1016/0038-1098(80)90988-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：917 / 920

页数：4

共 11 条

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[2]

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[3]

ABBATI I, UNPUBLISHED

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[5]

Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

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[7]

DELPENNINO U, UNPUBLISHED

[8] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

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HO, PS ;

KUAN, TS .

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[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J].

HO, PS ;

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LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1120-1124

[10] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

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