ROLE OF SURFACE TREATMENT IN LASER DAMAGE OF GERMANIUM

[1] LASER DAMAGE ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) : 4088 - +

[2] REFLECTIVITY ENHANCEMENT OF SEMICONDUCTORS BY Q-SWITCHED RUBY LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6032 - +

[3] BLINOV LM, 1967, SOV PHYS SEMICOND, V1, P1124

[4] BONCHBRUEVICH AM, 1968, SOV PHYS TECH PHYS-U, V13, P507

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[6] FAINSHTEIN SM, 1966, SOV PHYS-SOLID STATE, V8, P1556

[7] GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085

[8] KAGANOV MI, 1957, SOV PHYS JETP-USSR, V4, P173

[9] MANY AA, 1965, SEMICONDUCTOR SURFAC, P394

[10] Samsonov G. V., 1968, HDB PHYSICOCHEMICAL

[1] LASER DAMAGE ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) : 4088 - +

[2] REFLECTIVITY ENHANCEMENT OF SEMICONDUCTORS BY Q-SWITCHED RUBY LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6032 - +

[3] BLINOV LM, 1967, SOV PHYS SEMICOND, V1, P1124

[4] BONCHBRUEVICH AM, 1968, SOV PHYS TECH PHYS-U, V13, P507

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[6] FAINSHTEIN SM, 1966, SOV PHYS-SOLID STATE, V8, P1556

[7] GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085

[8] KAGANOV MI, 1957, SOV PHYS JETP-USSR, V4, P173

[9] MANY AA, 1965, SEMICONDUCTOR SURFAC, P394

[10] Samsonov G. V., 1968, HDB PHYSICOCHEMICAL