THE TEMPERATURE-DEPENDENCE OF OPTICAL GAP AND PHOTOCONDUCTIVITY THRESHOLD IN UNDOPED HYDROGENATED AMORPHOUS-SILICON FILMS

被引：18

作者：

TARDY, J ^{[1
]}

MEAUDRE, R ^{[1
]}

机构：

[1] UNIV LYON 1,PHYS ELECTR LAB,F-69622 VILLEURBANNE,FRANCE

来源：

关键词：

D O I：

10.1016/0038-1098(81)90201-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1031 / 1034

页数：4

共 14 条

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DOHLER, GH .

PHYSICAL REVIEW B, 1979, 19 (04) :2083-2091

GRIFFITH, RW .

[5]

LECOMBER PG, 1973, ELECTRONIC STRUCTURA

[6]

MEAUDRE R, UNPUBLISHED

[7]

Mott N. F., 1979, ELECT PROCESSES NONC

[8] STATES IN THE GAP IN NON-CRYSTALLINE SEMICONDUCTORS [J].

MOTT, NF .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (30) :5433-5471

[9]

NAGELS P, 1979, AMORPHOUS SEMICONDUC, pCH5

PERRIN, J ;

SOLOMON, I .