STATES IN THE GAP IN NON-CRYSTALLINE SEMICONDUCTORS

被引:93
作者
MOTT, NF
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 30期
关键词
D O I
10.1088/0022-3719/13/30/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:5433 / 5471
页数:39
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共 222 条
[1]   PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS [J].
ABKOWITZ, M ;
PAI, DM .
PHYSICAL REVIEW B, 1978, 18 (04) :1741-1750
[2]  
ABOUCHAKRA R, 1974, J PHYS C, V6, P1734
[3]   SCALING THEORY OF LOCALIZATION AND NON-OHMIC EFFECTS IN 2 DIMENSIONS [J].
ABRAHAMS, E ;
RAMAKRISHNAN, TV .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :15-20
[4]   SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].
ABRAHAMS, E ;
ANDERSON, PW ;
LICCIARDELLO, DC ;
RAMAKRISHNAN, TV .
PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676
[5]  
ABRAHAMS E, 1980, PHIL MAG B, V42
[6]   THRESHOLD CONDUCTION IN INVERSION LAYERS [J].
ADKINS, CJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (05) :851-883
[7]   HALL-EFFECT IN INVERSION LAYERS [J].
ADKINS, CJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (05) :535-548
[8]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[9]   ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D ;
YOFFA, EJ .
PHYSICAL REVIEW LETTERS, 1976, 36 (20) :1197-1200
[10]   MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS [J].
ADLER, D ;
HENISCH, HK ;
MOTT, N .
REVIEWS OF MODERN PHYSICS, 1978, 50 (02) :209-220