HALL-EFFECT IN INVERSION LAYERS

被引：14

作者：

ADKINS, CJ

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 38卷 / 05期

关键词：

D O I：

10.1080/13642817808246402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：535 / 548

页数：14

共 22 条

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[2]

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[9] CONDUCTANCE ANOMALIES AND ELECTRONIC STATES IN SILICON INVERSION LAYERS NEAR THRESHOLD AT LOW-TEMPERATURES [J].

KATAYAMA, Y ;

NARITA, K ;

SHIRAKI, Y ;

AOKI, M ;

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