CONDUCTANCE ANOMALIES AND ELECTRONIC STATES IN SILICON INVERSION LAYERS NEAR THRESHOLD AT LOW-TEMPERATURES

被引：6

作者：

KATAYAMA, Y ^{[1
]}

NARITA, K ^{[1
]}

SHIRAKI, Y ^{[1
]}

AOKI, M ^{[1
]}

KOMATSUBARA, KF ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1977年 / 42卷 / 05期

关键词：

D O I：

10.1143/JPSJ.42.1632

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1632 / 1639

页数：8

相关论文

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