DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS

[1] LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20): : L379 - L381

[2] ARNOLD E, 1973, B AM PHYS SOC, V18, P1605

[3] ARNOLD E, 1969, 1969 P INT C PROP US, P193

[4] ARNOLD E, 1968, IEEE T ELECTRON DEVI, VED15, P1003

[5] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 828 - 834

[6] SIMPLE MODEL FOR DENSITY OF STATES AND MOBILITY OF AN ELECTRON IN A GAS OF HARD-CORE SCATTERERS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (12) : 807 - +

[7] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[8] MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382

[9] MOTT NF, 1971, ELECTRONIC PROCESSES

[10] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J]. PHYSICS LETTERS A, 1974, A 47 (01) : 71 - 72

[1] LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20): : L379 - L381

[2] ARNOLD E, 1973, B AM PHYS SOC, V18, P1605

[3] ARNOLD E, 1969, 1969 P INT C PROP US, P193

[4] ARNOLD E, 1968, IEEE T ELECTRON DEVI, VED15, P1003

[5] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 828 - 834

[6] SIMPLE MODEL FOR DENSITY OF STATES AND MOBILITY OF AN ELECTRON IN A GAS OF HARD-CORE SCATTERERS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (12) : 807 - +

[7] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[8] MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382

[9] MOTT NF, 1971, ELECTRONIC PROCESSES

[10] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J]. PHYSICS LETTERS A, 1974, A 47 (01) : 71 - 72