CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES

被引：60

作者：

CHEN, JTC

MULLER, RS

机构：

[1] UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] UNIV CALIF, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 02期

关键词：

D O I：

10.1063/1.1663326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：828 / 834

页数：7

共 13 条

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[3] ELECTRONS AND SURFONS IN A SEMICONDUCTOR INVERSION LAYER
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[4] ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES
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[J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 16 - +
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[7] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
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[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720
[8] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON
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[J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464
[9] CARRIER MOBILITY IN SILICON MOSTS
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[J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 775 - +
[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

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