共 21 条
- [4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
- [6] FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331
- [8] OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1435 - 1437
- [9] HARTSTEIN A, 1975, B AM PHYS SOC, V20, P426
- [10] HARTSTEIN A, TO BE PUBLISHED