OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS

被引：67

作者：

HARTSTEIN, A ^{[1
]}

FOWLER, AB ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 34卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.34.1435

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1435 / 1437

页数：3

共 8 条

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[2]

HARTSTEIN A, 1975, B AM PHYS SOC, V20, P426

[3]

HARTSTEIN A, TO BE PUBLISHED

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[6] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[7] PEAKED STRUCTURE APPEARING IN FIELD-EFFECT MOBILITY OF SILICON MOS DEVICES AT TEMPERATURES ABOVE 20K [J].

TIDEY, RJ ;

STRADLING, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (19) :L356-L361

[8] MOTT-ANDERSON LOCALIZATION IN 2-DIMENSIONAL BAND TAIL OF SI INVERSION LAYERS [J].

TSUI, DC ;

ALLEN, SJ .

PHYSICAL REVIEW LETTERS, 1974, 32 (21) :1200-1203

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