2-DIMENSIONAL IMPURITY STATES IN AN N-TYPE INVERSION LAYER OF SILICON

被引：10

作者：

KOTERA, N

YOSHIDA, I

KATAYAMA, Y

KOMATSUBARA, KF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.1317772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：754 / +

页数：1

共 12 条

[1] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J].

FANG, FF ;

STILES, PJ .

PHYSICAL REVIEW, 1968, 174 (03) :823-&

[2] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[3] MAGNETIC-FIELD-INDUCED MOTT TRANSITION IN SEMICONDUCTORS [J].

FENTON, EW ;

HAERING, RR .

PHYSICAL REVIEW, 1967, 159 (03) :593-&

[4] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

FOWLER, AB ;

FANG, FF ;

HOWARD, WE ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&

[5]

FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331

[6] ELECTRON SHIELDING IN N-INSB [J].

LI, SP ;

LOVE, WF ;

MILLER, SC .

PHYSICAL REVIEW, 1967, 162 (03) :728-&

[7]

MIYAZAKI T, 1970, JAPAN J APPL PHYS S, V40, P199

[8] ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS [J].

MOTT, NF .

CANADIAN JOURNAL OF PHYSICS, 1956, 34 (12) :1356-1368

[9]

MURAYAMA Y, 1971, 3 C SOL STAT DEV TOK

[10] THEORY OF INFLUENCE OF MISFIT DISLOCATIONS ON INTERFACIAL MOBILITY AND HALL EFFECT [J].

NEUMARK, GF .

PHYSICAL REVIEW B, 1970, 1 (06) :2613-&

← 1 2 →