ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[3] BETHE HA, 1933, HANDBUCH PHYSIK, V24, P529

[4] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1075 - 1078

[5] Castellan G. W., 1951, SEMICONDUCTING MATER, P8

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[7] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] HEIKES RR, 1955, PHYS REV, V99, P1232

[10] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[3] BETHE HA, 1933, HANDBUCH PHYSIK, V24, P529

[4] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1075 - 1078

[5] Castellan G. W., 1951, SEMICONDUCTING MATER, P8

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[7] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] HEIKES RR, 1955, PHYS REV, V99, P1232

[10] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236