SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES

被引：59

作者：

FOWLER, AB ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 34卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.34.15

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：15 / 17

页数：3

共 17 条

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[7]

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[8]

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[9] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J].

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PHYSICS LETTERS A, 1974, A 47 (01) :71-72

[10] SPATIAL EXTENT OF LOCALIZED STATE WAVEFUNCTIONS IN SILICON INVERSION LAYERS [J].

PEPPER, M ;

POLLITT, S ;

ADKINS, CJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (15) :L273-L277

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