HIGH-TEMPERATURE VARIABLE RANGE HOPPING CONDUCTIVITY IN SILICON INVERSION LAYERS

被引：34

作者：

HARTSTEIN, A ^{[1
]}

FOWLER, AB ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1975年 / 8卷 / 11期

关键词：

D O I：

10.1088/0022-3719/8/11/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L249 / L253

页数：5

共 11 条

[1] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J].

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :705-707

[2] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].

DISTEFAN.TH .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :280-&

[3] NUMERICAL STUDIES OF LOCALIZATION IN DISORDERED SYSTEMS [J].

EDWARDS, JT ;

THOULESS, DJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (08) :807-&

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5] PERCOLATION AND CONDUCTION [J].

KIRKPATRICK, S .

REVIEWS OF MODERN PHYSICS, 1973, 45 (04) :574-588

[6] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&

[7] ANDERSON LOCALIZATION OF HOLES IN A SI INVERSION LAYER [J].

PEPPER, M ;

POLLITT, S ;

ADKINS, CJ .

PHYSICS LETTERS A, 1974, A 48 (02) :113-114

[8] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J].

PEPPER, M ;

POLLITT, S ;

ADKINS, CJ ;

OAKLEY, RE .

PHYSICS LETTERS A, 1974, A 47 (01) :71-72

[9] SPATIAL EXTENT OF LOCALIZED STATE WAVEFUNCTIONS IN SILICON INVERSION LAYERS [J].

PEPPER, M ;

POLLITT, S ;

ADKINS, CJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (15) :L273-L277

[10] MOTT-ANDERSON LOCALIZATION IN 2-DIMENSIONAL BAND TAIL OF SI INVERSION LAYERS [J].

TSUI, DC ;

ALLEN, SJ .

PHYSICAL REVIEW LETTERS, 1974, 32 (21) :1200-1203

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