DETERMINATION OF THE BONDING OF CARBON ACCEPTORS IN INXGA1-XAS FOR X-LESS-THAN-0.1

被引:8
作者
PRITCHARD, RE
NEWMAN, RC
WAGNER, J
MAIER, M
MAZUELAS, A
PLOOG, KH
LANE, PA
MARTIN, T
WHITEHOUSE, CR
机构
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
[2] PAUL DRUDE INST FESTKOPERELEKTR,D-10117 BERLIN,GERMANY
[3] DEF RES AGCY MALVERN,MALVERN WR14 3PS,WORCS,ENGLAND
关键词
D O I
10.1063/1.113122
中图分类号
O59 [应用物理学];
学科分类号
摘要
The local environment of CAs acceptors in InxGa1-xAs has been determined from the localized vibrational modes (LVMs) of both isolated CAs impurities and H-CAs pairs using infrared (IR) absorption and Raman scattering techniques. In as-grown layers, a single LVM due to CAs was observed which broadened and shifted to lower energies with increasing x. The introduction of hydrogen led to the formation of H-CAs pairs and a single antisymmetric A1- mode (stretch) and a single symmetric A1+ mode (XH) were observed for all samples. All the LVMs were identified with carbon in CAsGa4 cluster configurations implying that less than 5% of the detectable carbon atoms are present in clusters incorporating one or more CAs-In bonds.© 1995 American Institute of Physics.
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页码:2676 / 2678
页数:3
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