PHOTOELECTRONIC PROPERTIES OF A-SI=H AND A-GE=H THIN-FILMS IN SURFACE CELL STRUCTURES

被引：13

作者：

PARSONS, GN ^{[1
]}

KUSANO, C ^{[1
]}

LUCOVSKY, G ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574541

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1655 / 1660

页数：6

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