PLANAR MAGNETRON SPUTTERING OF A-SI-H AND A-GE-H THIN-FILMS

[1] CARLSON DE, 1977, RCA REV, V38, P211

[2] OPTICAL-PROPERTIES OF AMORPHOUS SIXGE1-X(H) ALLOYS PREPARED BY RFGLOW DISCHARGE [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (12) : 867 - 869

[3] DONG NV, 1981, J APPL PHYS, V52, P338

[4] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[5] JONES DI, 1979, PHILOS MAG B, V39, P147, DOI 10.1080/13642817908246344

[6] MAKAMURA G, 1981, JPN J APPL PHYS S, V20, P291

[7] RF MAGNETRON SPUTTERING OF ALPHA-SI-H [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 659 - 662

[8] STUDIES OF THIN-FILM GROWTH OF SPUTTERED HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 187 - 204

[9] TRANSPORT AND RECOMBINATION IN SPUTTERED HYDROGENATED AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1564 - 1576

[10] Paul D. K., 1980, Journal of the Physical Society of Japan, V49, P1261

[1] CARLSON DE, 1977, RCA REV, V38, P211

[2] OPTICAL-PROPERTIES OF AMORPHOUS SIXGE1-X(H) ALLOYS PREPARED BY RFGLOW DISCHARGE [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (12) : 867 - 869

[3] DONG NV, 1981, J APPL PHYS, V52, P338

[4] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[5] JONES DI, 1979, PHILOS MAG B, V39, P147, DOI 10.1080/13642817908246344

[6] MAKAMURA G, 1981, JPN J APPL PHYS S, V20, P291

[7] RF MAGNETRON SPUTTERING OF ALPHA-SI-H [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 659 - 662

[8] STUDIES OF THIN-FILM GROWTH OF SPUTTERED HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 187 - 204

[9] TRANSPORT AND RECOMBINATION IN SPUTTERED HYDROGENATED AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1564 - 1576

[10] Paul D. K., 1980, Journal of the Physical Society of Japan, V49, P1261