STUDIES OF THIN-FILM GROWTH OF SPUTTERED HYDROGENATED AMORPHOUS-SILICON

被引：53

作者：

MOUSTAKAS, TD

机构：

来源：

SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期

关键词：

D O I：

10.1016/0165-1633(82)90062-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

收藏

页码：187 / 204

页数：18

相关论文

共 35 条

[1] IMPORTANCE OF ARGON PRESSURE IN THE PREPARATION OF RF-SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS
ANDERSON, DA
MODDEL, G
PAESLER, MA
PAUL, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 906 - 912
[2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[3] Carlson D. E., 1979, Amorphous semiconductors, P287
[4] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON SOLAR-CELLS
CARLSON, DE
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 503 - 518
[5] ARGON CONTENT IN (III) SILICON FOR SPUTTERING ENERGIES BELOW 200 EV
COMAS, J
WOLICKI, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1197 - &
[6] OPTICAL-PROPERTIES OF REACTIVELY SPUTTERED A-SIHX FILMS
DENEUFVILLE, JP
MOUSTAKAS, TD
RUPPERT, AF
LANFORD, WA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 481 - 486
[7] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON
FREEMAN, EC
PAUL, W
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4288 - 4300
[8] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501
[9] CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS-SILICON
JEFFREY, FR
SHANKS, HR
DANIELSON, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7034 - 7038
[10] DETERMINATION OF ARGON IN SPUTTERED SILICON FILMS BY ENERGY-DISPERSIVE X-RAY-FLUORESCENCE SPECTROMETRY
KALNICKY, DJ
MOUSTAKAS, TD
[J]. ANALYTICAL CHEMISTRY, 1981, 53 (12) : 1792 - 1795

← 1 2 3 4 →